BUV66A NPN Transistor

The BUV66A is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUV66A transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUV66A transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUV66A transistor as follows.

BUV66A Transistor Specification

Transistor Code		BUV66A
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	100W
Collector-Base Voltage (Maximum)	VCB	450V
Collector-Emitter Voltage (Maximum)	VCE	450V
Collector Current (Maximum)	IC	6.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		10

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