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BUV60 NPN Transistor

The BUV60 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUV60 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUV60 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUV60 transistor as follows.

Circuit diagram symbol of the BUV60 transistor

BUV60 Transistor Specification

Transistor Code BUV60
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO3
Collector Power Dissipation (Maximum) PC 250W
Collector-Base Voltage (Maximum) VCB 250V
Collector-Emitter Voltage (Maximum) VCE 125V
Collector Current (Maximum) IC 50A
Operating Junction Temperature (Maximum) TJ 200°C
Forward Current Transfer Ratio (hFE Value) 10

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