BUV56A NPN Transistor

The BUV56A is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUV56A transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUV56A transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUV56A transistor as follows.

BUV56A Transistor Specification

Transistor Code		BUV56A
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	120W
Collector-Base Voltage (Maximum)	VCB	1000V
Collector-Emitter Voltage (Maximum)	VCE	450V
Collector Current (Maximum)	IC	4A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		10

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