BUV52A NPN Transistor

The BUV52A is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUV52A transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUV52A transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUV52A transistor as follows.

BUV52A Transistor Specification

Transistor Code		BUV52A
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	150W
Collector-Base Voltage (Maximum)	VCB	400V
Collector-Emitter Voltage (Maximum)	VCE	300V
Collector Current (Maximum)	IC	20A
Operating Junction Temperature (Maximum)	TJ	200°C
Forward Current Transfer Ratio (hFE Value)		10

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