BUV51 NPN Transistor

The BUV51 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUV51 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUV51 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUV51 transistor as follows.

BUV51 Transistor Specification

Transistor Code		BUV51
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	150W
Collector-Base Voltage (Maximum)	VCB	300V
Collector-Emitter Voltage (Maximum)	VCE	200V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)	TJ	200°C
Forward Current Transfer Ratio (hFE Value)		10

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