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BUV30 NPN Transistor

The BUV30 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUV30 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUV30 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUV30 transistor as follows.

Circuit diagram symbol of the BUV30 transistor

BUV30 Transistor Specification

Transistor Code BUV30
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TOP3
Collector Power Dissipation (Maximum) PC 40W
Collector-Base Voltage (Maximum) VCB 450V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 8A
Operating Junction Temperature (Maximum) TJ 150°C
Forward Current Transfer Ratio (hFE Value) 350

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