BUV21N NPN Transistor

The BUV21N is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUV21N transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUV21N transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUV21N transistor as follows.

BUV21N Transistor Specification

Transistor Code		BUV21N
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	250W
Collector-Base Voltage (Maximum)	VCB	220V
Collector-Emitter Voltage (Maximum)	VCE	180V
Collector Current (Maximum)	IC	40A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		15
Transition Frequency	FT	8MHz

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