BUT51P NPN Transistor

The BUT51P is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUT51P transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUT51P transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUT51P transistor as follows.

BUT51P Transistor Specification

Transistor Code		BUT51P
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TOP3
Collector Power Dissipation (Maximum)	PC	125W
Collector-Base Voltage (Maximum)	VCB	850V
Collector-Emitter Voltage (Maximum)	VCE	500V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	8V
Forward Current Transfer Ratio (hFE Value)		40

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