BUT11AF NPN Transistor

The BUT11AF is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUT11AF transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUT11AF transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUT11AF transistor as follows.

BUT11AF Transistor Specification

Transistor Code		BUT11AF
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		ISO220
Collector Power Dissipation (Maximum)	PC	40W
Collector-Base Voltage (Maximum)	VCB	1000V
Collector-Emitter Voltage (Maximum)	VCE	450V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		30

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