BUS11B NPN Transistor

The BUS11B is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUS11B transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUS11B transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUS11B transistor as follows.

BUS11B Transistor Specification

Transistor Code		BUS11B
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	100W
Collector-Base Voltage (Maximum)	VCB	1000V
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	9V
Forward Current Transfer Ratio (hFE Value)		30

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