BUR55 NPN Transistor

The BUR55 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUR55 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUR55 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUR55 transistor as follows.

BUR55 Transistor Specification

Transistor Code		BUR55
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	250W
Collector-Base Voltage (Maximum)	VCB	300V
Collector-Emitter Voltage (Maximum)	VCE	150V
Collector Current (Maximum)	IC	70A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	8V
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	10MHz

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