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BUR55 NPN Transistor

The BUR55 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUR55 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUR55 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUR55 transistor as follows.

Circuit diagram symbol of the BUR55 transistor

BUR55 Transistor Specification

Transistor Code BUR55
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO3
Collector Power Dissipation (Maximum) PC 250W
Collector-Base Voltage (Maximum) VCB 300V
Collector-Emitter Voltage (Maximum) VCE 150V
Collector Current (Maximum) IC 70A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 8V
Forward Current Transfer Ratio (hFE Value) 10
Transition Frequency FT 10MHz

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