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BULB39D NPN Transistor

The BULB39D is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BULB39D transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BULB39D transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BULB39D transistor as follows.

Circuit diagram symbol of the BULB39D transistor

BULB39D Transistor Specification

Transistor Code BULB39D
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package D2PAK
Collector Power Dissipation (Maximum) PC 70W
Collector-Base Voltage (Maximum) VCB 800V
Collector-Emitter Voltage (Maximum) VCE 450V
Collector Current (Maximum) IC 4A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 4

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