BUL903ED NPN Transistor

The BUL903ED is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUL903ED transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUL903ED transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUL903ED transistor as follows.

BUL903ED Transistor Specification

Transistor Code		BUL903ED
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	70W
Collector-Base Voltage (Maximum)	VCB	900V
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		20

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