BUL66B NPN Transistor

The BUL66B is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUL66B transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUL66B transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUL66B transistor as follows.

BUL66B Transistor Specification

Transistor Code		BUL66B
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO251
Collector Power Dissipation (Maximum)	PC	25W
Collector-Base Voltage (Maximum)	VCB	200V
Collector-Emitter Voltage (Maximum)	VCE	120V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	10V
Forward Current Transfer Ratio (hFE Value)		25
Transition Frequency	FT	20MHz
Collector Capacitance	CC	100pF

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