BUL65B NPN Transistor

The BUL65B is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUL65B transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUL65B transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUL65B transistor as follows.

BUL65B Transistor Specification

Transistor Code		BUL65B
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO251
Collector Power Dissipation (Maximum)	PC	20W
Collector-Base Voltage (Maximum)	VCB	500V
Collector-Emitter Voltage (Maximum)	VCE	250V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	10V
Forward Current Transfer Ratio (hFE Value)		25
Transition Frequency	FT	20MHz
Collector Capacitance	CC	25pF

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