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BUL63B NPN Transistor

The BUL63B is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUL63B transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUL63B transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUL63B transistor as follows.

Circuit diagram symbol of the BUL63B transistor

BUL63B Transistor Specification

Transistor Code BUL63B
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO251
Collector Power Dissipation (Maximum) PC 25W
Collector-Base Voltage (Maximum) VCB 500V
Collector-Emitter Voltage (Maximum) VCE 250V
Collector Current (Maximum) IC 12A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 10V
Forward Current Transfer Ratio (hFE Value) 25
Transition Frequency FT 20MHz
Collector Capacitance CC 70pF

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More Transistors Datasheets in TO251 Package

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