BUL57AN2A NPN Transistor

The BUL57AN2A is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUL57AN2A transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUL57AN2A transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUL57AN2A transistor as follows.

BUL57AN2A Transistor Specification

Transistor Code		BUL57AN2A
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO276AB
Collector Power Dissipation (Maximum)	PC	85W
Collector-Base Voltage (Maximum)	VCB	200V
Collector-Emitter Voltage (Maximum)	VCE	70V
Collector Current (Maximum)	IC	22A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	10V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	20MHz
Collector Capacitance	CC	280pF

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