BUL55B NPN Transistor

The BUL55B is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUL55B transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUL55B transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUL55B transistor as follows.

BUL55B Transistor Specification

Transistor Code		BUL55B
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	50W
Collector-Base Voltage (Maximum)	VCB	550V
Collector-Emitter Voltage (Maximum)	VCE	250V
Collector Current (Maximum)	IC	4A
Operating Junction Temperature (Maximum)	TJ	200°C
Forward Current Transfer Ratio (hFE Value)		40

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