BUL55ASMD NPN Transistor

The BUL55ASMD is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUL55ASMD transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUL55ASMD transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUL55ASMD transistor as follows.

BUL55ASMD Transistor Specification

Transistor Code		BUL55ASMD
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO276AB
Collector Power Dissipation (Maximum)	PC	55W
Collector-Emitter Voltage (Maximum)	VCE	300V
Collector Current (Maximum)	IC	7A
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	20MHz

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