BUL54ASMD NPN Transistor

The BUL54ASMD is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUL54ASMD transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUL54ASMD transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUL54ASMD transistor as follows.

BUL54ASMD Transistor Specification

Transistor Code		BUL54ASMD
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO276AB
Collector Power Dissipation (Maximum)	PC	35W
Collector-Base Voltage (Maximum)	VCB	1000V
Collector-Emitter Voltage (Maximum)	VCE	500V
Collector Current (Maximum)	IC	2A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	10V
Forward Current Transfer Ratio (hFE Value)		12
Transition Frequency	FT	20MHz
Collector Capacitance	CC	20pF

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