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BUL53BSMD NPN Transistor

The BUL53BSMD is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUL53BSMD transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUL53BSMD transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUL53BSMD transistor as follows.

Circuit diagram symbol of the BUL53BSMD transistor

BUL53BSMD Transistor Specification

Transistor Code BUL53BSMD
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO276AB
Collector Power Dissipation (Maximum) PC 90W
Collector-Base Voltage (Maximum) VCB 500V
Collector-Emitter Voltage (Maximum) VCE 250V
Collector Current (Maximum) IC 12A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 10V
Forward Current Transfer Ratio (hFE Value) 5
Transition Frequency FT 20MHz
Collector Capacitance CC 200pF

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