BUL53BSMD NPN Transistor

The BUL53BSMD is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUL53BSMD transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUL53BSMD transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUL53BSMD transistor as follows.

BUL53BSMD Transistor Specification

Transistor Code		BUL53BSMD
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO276AB
Collector Power Dissipation (Maximum)	PC	90W
Collector-Base Voltage (Maximum)	VCB	500V
Collector-Emitter Voltage (Maximum)	VCE	250V
Collector Current (Maximum)	IC	12A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	10V
Forward Current Transfer Ratio (hFE Value)		5
Transition Frequency	FT	20MHz
Collector Capacitance	CC	200pF

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