BUL53B-SM NPN Transistor

The BUL53B-SM is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUL53B-SM transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUL53B-SM transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUL53B-SM transistor as follows.

BUL53B-SM Transistor Specification

Transistor Code		BUL53B-SM
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO276AB
Collector Power Dissipation (Maximum)	PC	60W
Collector-Base Voltage (Maximum)	VCB	500V
Collector-Emitter Voltage (Maximum)	VCE	250V
Collector Current (Maximum)	IC	12A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	10V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	20MHz
Collector Capacitance	CC	200pF

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