BUL510 NPN Transistor

The BUL510 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUL510 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUL510 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUL510 transistor as follows.

BUL510 Transistor Specification

Transistor Code		BUL510
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	80W
Collector-Base Voltage (Maximum)	VCB	1000V
Collector-Emitter Voltage (Maximum)	VCE	450V
Collector Current (Maximum)	IC	12A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	9V
Forward Current Transfer Ratio (hFE Value)		15

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