BUL416T NPN Transistor

The BUL416T is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUL416T transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUL416T transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUL416T transistor as follows.

BUL416T Transistor Specification

Transistor Code		BUL416T
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	110W
Collector-Base Voltage (Maximum)	VCB	1600V
Collector-Emitter Voltage (Maximum)	VCE	800V
Collector Current (Maximum)	IC	6A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	9V
Forward Current Transfer Ratio (hFE Value)		10

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