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BUL128DR7 NPN Transistor

The BUL128DR7 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUL128DR7 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUL128DR7 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUL128DR7 transistor as follows.

Circuit diagram symbol of the BUL128DR7 transistor

BUL128DR7 Transistor Specification

Transistor Code BUL128DR7
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO220
Collector Power Dissipation (Maximum) PC 75W
Collector-Base Voltage (Maximum) VCB 700V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 4A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 10
Transition Frequency FT 7MHz

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