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BUH515XI NPN Transistor

The BUH515XI is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUH515XI transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUH515XI transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUH515XI transistor as follows.

Circuit diagram symbol of the BUH515XI transistor

BUH515XI Transistor Specification

Transistor Code BUH515XI
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package ISO220
Collector Power Dissipation (Maximum) PC 35W
Collector-Base Voltage (Maximum) VCB 1500V
Collector-Emitter Voltage (Maximum) VCE 700V
Collector Current (Maximum) IC 8A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 10V
Forward Current Transfer Ratio (hFE Value) 10

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