BUH515D NPN Transistor

The BUH515D is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUH515D transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUH515D transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUH515D transistor as follows.

BUH515D Transistor Specification

Transistor Code		BUH515D
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		ISO218
Collector Power Dissipation (Maximum)	PC	60W
Collector-Base Voltage (Maximum)	VCB	1500V
Collector-Emitter Voltage (Maximum)	VCE	700V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	10V
Forward Current Transfer Ratio (hFE Value)		10

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