BUH313D NPN Transistor

The BUH313D is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUH313D transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUH313D transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUH313D transistor as follows.

BUH313D Transistor Specification

Transistor Code		BUH313D
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		ISO218
Collector Power Dissipation (Maximum)	PC	50W
Collector-Base Voltage (Maximum)	VCB	1300V
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	10V
Forward Current Transfer Ratio (hFE Value)		5.5

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