BUH2M20AP NPN Transistor

The BUH2M20AP is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUH2M20AP transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUH2M20AP transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUH2M20AP transistor as follows.

BUH2M20AP Transistor Specification

Transistor Code		BUH2M20AP
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	40W
Collector-Base Voltage (Maximum)	VCB	2000V
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector Current (Maximum)	IC	0.03A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		10

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