BUF725D NPN Transistor

The BUF725D is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUF725D transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUF725D transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUF725D transistor as follows.

BUF725D Transistor Specification

Transistor Code		BUF725D
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	40W
Collector-Base Voltage (Maximum)	VCB	500V
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	11V
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	4MHz

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