BUF636A NPN Transistor

The BUF636A is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUF636A transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUF636A transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUF636A transistor as follows.

BUF636A Transistor Specification

Transistor Code		BUF636A
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	50W
Collector-Base Voltage (Maximum)	VCB	550V
Collector-Emitter Voltage (Maximum)	VCE	450V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	11V
Forward Current Transfer Ratio (hFE Value)		15
Transition Frequency	FT	4MHz

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