BUF410FI NPN Transistor

The BUF410FI is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUF410FI transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUF410FI transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUF410FI transistor as follows.

BUF410FI Transistor Specification

Transistor Code		BUF410FI
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		ISOTOP
Collector Power Dissipation (Maximum)	PC	60W
Collector-Base Voltage (Maximum)	VCB	850V
Collector-Emitter Voltage (Maximum)	VCE	450V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		100

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