BUD636ASMD NPN Transistor

The BUD636ASMD is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUD636ASMD transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUD636ASMD transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUD636ASMD transistor as follows.

BUD636ASMD Transistor Specification

Transistor Code		BUD636ASMD
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO252
Collector Power Dissipation (Maximum)	PC	40W
Collector-Base Voltage (Maximum)	VCB	550V
Collector-Emitter Voltage (Maximum)	VCE	450V
Collector Current (Maximum)	IC	6A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	11V
Forward Current Transfer Ratio (hFE Value)		15
Transition Frequency	FT	4MHz

UXPython is not the creator or an official representative of the BUD636ASMD NPN transistor. You can download the official BUD636ASMD NPN transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in TO252 Package

MJD210-1 PNP Transistor KSH29CI NPN Transistor BUXD87T4 NPN Transistor MJD47T4 NPN Transistor NJVMJD45H11G PNP Transistor 2SC5706-H NPN Transistor KSH200 NPN Transistor NSS1C301E NPN Transistor 2SB1182Q PNP Transistor NJVMJD44E3T4G NPN Transistor NJVMJD31CRLG NPN Transistor MJD32CT4 PNP Transistor 2N5666SM NPN Transistor 2SA2169-TL-E PNP Transistor 2SB1669-Z PNP Transistor KSB906Y PNP Transistor NJVNJD2873T4G NPN Transistor 3DD4550_A4 NPN Transistor 2SC5706-TL-H NPN Transistor MJD31-1 NPN Transistor