BU930ZP NPN Transistor

The BU930ZP is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BU930ZP transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BU930ZP transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BU930ZP transistor as follows.

BU930ZP Transistor Specification

Transistor Code		BU930ZP
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	150W
Collector-Base Voltage (Maximum)	VCB	400V
Collector-Emitter Voltage (Maximum)	VCE	350V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		80

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