BU808DXI NPN Transistor

The BU808DXI is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BU808DXI transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BU808DXI transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BU808DXI transistor as follows.

BU808DXI Transistor Specification

Transistor Code		BU808DXI
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		ISO220
Collector Power Dissipation (Maximum)	PC	35W
Collector-Base Voltage (Maximum)	VCB	1400V
Collector-Emitter Voltage (Maximum)	VCE	700V
Collector Current (Maximum)	IC	7.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		25

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