BU807F NPN Transistor

The BU807F is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BU807F transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BU807F transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BU807F transistor as follows.

BU807F Transistor Specification

Transistor Code		BU807F
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	60W
Collector-Base Voltage (Maximum)	VCB	330V
Collector-Emitter Voltage (Maximum)	VCE	150V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		100

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