BU706DF NPN Transistor

The BU706DF is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BU706DF transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BU706DF transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BU706DF transistor as follows.

BU706DF Transistor Specification

Transistor Code		BU706DF
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		ISO218
Collector Power Dissipation (Maximum)	PC	29W
Collector-Base Voltage (Maximum)	VCB	1500V
Collector-Emitter Voltage (Maximum)	VCE	700V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		7.5

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