BU536 NPN Transistor

The BU536 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BU536 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BU536 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BU536 transistor as follows.

BU536 Transistor Specification

Transistor Code		BU536
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	50W
Collector-Base Voltage (Maximum)	VCB	1100V
Collector-Emitter Voltage (Maximum)	VCE	480V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)	TJ	200°C
Forward Current Transfer Ratio (hFE Value)		5.5

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