BU508DR NPN Transistor

The BU508DR is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BU508DR transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BU508DR transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BU508DR transistor as follows.

BU508DR Transistor Specification

Transistor Code		BU508DR
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TOP3
Collector Power Dissipation (Maximum)	PC	125W
Collector-Base Voltage (Maximum)	VCB	1500V
Collector-Emitter Voltage (Maximum)	VCE	700V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		4.5
Transition Frequency	FT	7MHz
Collector Capacitance	CC	125pF

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