BU505DF NPN Transistor

The BU505DF is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BU505DF transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BU505DF transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BU505DF transistor as follows.

BU505DF Transistor Specification

Transistor Code		BU505DF
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		ISO220
Collector Power Dissipation (Maximum)	PC	20W
Collector-Base Voltage (Maximum)	VCB	1550V
Collector-Emitter Voltage (Maximum)	VCE	700V
Collector Current (Maximum)	IC	2.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		22

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