BU415B NPN Transistor

The BU415B is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BU415B transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BU415B transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BU415B transistor as follows.

BU415B Transistor Specification

Transistor Code		BU415B
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	120W
Collector-Base Voltage (Maximum)	VCB	900V
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector Current (Maximum)	IC	20A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		4
Transition Frequency	FT	15MHz

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