BU412 NPN Transistor

The BU412 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BU412 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BU412 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BU412 transistor as follows.

BU412 Transistor Specification

Transistor Code		BU412
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	50W
Collector-Base Voltage (Maximum)	VCB	280V
Collector-Emitter Voltage (Maximum)	VCE	175V
Collector Current (Maximum)	IC	12A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	10MHz

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