BU323AP NPN Transistor

The BU323AP is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BU323AP transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BU323AP transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BU323AP transistor as follows.

BU323AP Transistor Specification

Transistor Code		BU323AP
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TOP3
Collector Power Dissipation (Maximum)	PC	125W
Collector-Base Voltage (Maximum)	VCB	350V
Collector-Emitter Voltage (Maximum)	VCE	250V
Collector Current (Maximum)	IC	40A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		1000
Transition Frequency	FT	4MHz
Collector Capacitance	CC	350pF

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