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BU3150F NPN Transistor

The BU3150F is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BU3150F transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BU3150F transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BU3150F transistor as follows.

Circuit diagram symbol of the BU3150F transistor

BU3150F Transistor Specification

Transistor Code BU3150F
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO126F
Collector Power Dissipation (Maximum) PC 20W
Collector-Base Voltage (Maximum) VCB 1100V
Collector-Emitter Voltage (Maximum) VCE 800V
Collector Current (Maximum) IC 1.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 15
Transition Frequency FT 5MHz

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More Transistors Datasheets in TO126F Package

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