BU2527DF NPN Transistor

The BU2527DF is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BU2527DF transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BU2527DF transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BU2527DF transistor as follows.

BU2527DF Transistor Specification

Transistor Code		BU2527DF
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT199
Collector Power Dissipation (Maximum)	PC	45W
Collector-Base Voltage (Maximum)	VCB	800V
Collector-Emitter Voltage (Maximum)	VCE	800V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	13.5V
Forward Current Transfer Ratio (hFE Value)		11
Collector Capacitance	CC	145pF

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