BU2508D NPN Transistor

The BU2508D is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BU2508D transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BU2508D transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BU2508D transistor as follows.

BU2508D Transistor Specification

Transistor Code		BU2508D
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO218
Collector Power Dissipation (Maximum)	PC	125W
Collector-Base Voltage (Maximum)	VCB	1500V
Collector-Emitter Voltage (Maximum)	VCE	700V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		7
Collector Capacitance	CC	90pF

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