BU2506DF NPN Transistor

The BU2506DF is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BU2506DF transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BU2506DF transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BU2506DF transistor as follows.

BU2506DF Transistor Specification

Transistor Code		BU2506DF
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT199
Collector Power Dissipation (Maximum)	PC	45W
Collector-Base Voltage (Maximum)	VCB	1500V
Collector-Emitter Voltage (Maximum)	VCE	700V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		7
Collector Capacitance	CC	47pF

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