BU212 NPN Transistor

The BU212 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BU212 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BU212 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BU212 transistor as follows.

BU212 Transistor Specification

Transistor Code		BU212
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	85W
Collector-Base Voltage (Maximum)	VCB	750V
Collector-Emitter Voltage (Maximum)	VCE	350V
Collector Current (Maximum)	IC	12A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		5

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