BU126S NPN Transistor

The BU126S is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BU126S transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BU126S transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BU126S transistor as follows.

BU126S Transistor Specification

Transistor Code		BU126S
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	30W
Collector-Base Voltage (Maximum)	VCB	800V
Collector-Emitter Voltage (Maximum)	VCE	350V
Collector Current (Maximum)	IC	6A
Operating Junction Temperature (Maximum)	TJ	125°C
Forward Current Transfer Ratio (hFE Value)		15
Transition Frequency	FT	4MHz

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