BU115 NPN Transistor

The BU115 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BU115 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BU115 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BU115 transistor as follows.

BU115 Transistor Specification

Transistor Code		BU115
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	80W
Collector-Base Voltage (Maximum)	VCB	800V
Collector-Emitter Voltage (Maximum)	VCE	800V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	10V
Forward Current Transfer Ratio (hFE Value)		20

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